The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Jun. 29, 2020
Senic Inc., Cheonan-si, KR;
Jong Hwi Park, Suwon-si, KR;
Jongmin Shim, Hwaseong-si, KR;
Eun Su Yang, Suwon-si, KR;
Yeon Sik Lee, Suwon-si, KR;
Byung Kyu Jang, Suwon-si, KR;
Jung Woo Choi, Suwon-si, KR;
Sang Ki Ko, Suwon-si, KR;
Kap-Ryeol Ku, Suwon-si, KR;
Jung-Gyu Kim, Suwon-si, KR;
SENIC INC., Cheonan-si, KR;
Abstract
A method for preparing a SiC ingot includes: disposing a raw material and a SiC seed crystal facing each other in a reactor having an internal space; subliming the raw material by controlling a temperature, a pressure, and an atmosphere of the internal space; growing the SiC ingot on the seed crystal; and collecting the SiC ingot after cooling the reactor. The wafer prepared from the ingot, which is prepared from the method, generates cracks when an impact is applied to a surface of the wafer, the impact is applied by an external impact source having mechanical energy, and a minimum value of the mechanical energy is 0.194 J to 0.475 J per unit area (cm).