The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2022
Filed:
Dec. 06, 2019
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Junzhan Liu, Wuhan, CN;
Chao Shen, Wuhan, CN;
Zhiliang Xia, Wuhan, CN;
Qiangmin Wei, Wuhan, CN;
Lei Li, Wuhan, CN;
Hai Song, Wuhan, CN;
Bingguo Wang, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
Aspects of the disclosure provide methods for polysilicon characterization. The method includes receiving image data of a polysilicon structure formed on a sample substrate. The image data is in a spatial domain and is generated by transmission electron microscopy (TEM). Further, the method includes extracting frequency spectrum of the image data in a frequency domain. Then, the method includes selecting a subset of the frequency spectrum that corresponds to characteristic of first crystal grains that are of a first orientation, and transforming the selected subset of the frequency spectrum to the spatial domain to construct a first spatial image for the first crystal grains of the first orientation.