The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2022

Filed:

Jun. 10, 2020
Applicant:

Ememory Technology Inc., Hsin-Chu, TW;

Inventors:

Chih-Wei Lai, Zhubei, TW;

Yun-Jen Ting, Zhubei, TW;

Yi-Han Wu, Zhubei, TW;

Kun-Hsin Lin, Zhubei, TW;

Hsin-Kun Hsu, Zhubei, TW;

Assignee:

EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01); H01L 27/02 (2006.01); G11C 7/06 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/12 (2006.01); G11C 16/14 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01); G11C 7/06 (2013.01); G11C 16/0441 (2013.01); G11C 16/08 (2013.01); G11C 16/12 (2013.01); G11C 16/14 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); H01L 27/0255 (2013.01); H01L 27/0277 (2013.01);
Abstract

An ESD circuit includes a voltage division circuit, a RC control circuit and a voltage selection circuit. The voltage division circuit is connected between a first power pad and a first node, and generates a first voltage. The RC control circuit is connected between the first power pad and a second power pad, and generates a second voltage and a third voltage. The voltage selection circuit receives the first voltage and the second voltage, and outputs a fourth voltage. The first transistor and the second transistor are serially connected between the first power pad and the second power pad. A gate terminal of the first transistor receives the first voltage. A gate terminal of the second transistor receives the third voltage. The third transistor is connected with the first power pad and an internal circuit. A gate terminal of the third transistor receives the fourth voltage.


Find Patent Forward Citations

Lai, Chih-Wei. (2022). Electrostatic discharge (esd) circuit capable of protecting internal circuit from being affected by esd zapping (U.S. Patent No. 11462903). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11462903

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…