The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
Nov. 23, 2020
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Bong Woong Mun, Singapore, SG;
Jeoung Mo Koo, Singapore, SG;
Assignee:
GLOBALFOUNDRIES Singapore Ptd. Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11521 (2017.01); H01L 49/02 (2006.01); H01L 29/06 (2006.01); H01L 29/788 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); H01L 28/60 (2013.01); H01L 29/0653 (2013.01); H01L 29/66825 (2013.01); H01L 29/7885 (2013.01);
Abstract
A nonvolatile memory device is provided. The nonvolatile memory device comprises a floating gate arranged over a first active region, whereby the first active region is in an active layer of a substrate. A metal-insulator-metal (MIM) capacitor may be provided laterally adjacent to the floating gate, whereby a portion of the metal-insulator-metal capacitor is in the active layer. A contact pillar may connect a first electrode of the metal-insulator-metal capacitor to the floating gate.