The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
Jul. 31, 2019
Applicant:
Hitachi High-tech Corporation, Tokyo, JP;
Inventors:
Assignee:
HITACHI HIGH-TECH CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/033 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/32449 (2013.01); H01J 37/32963 (2013.01); H01L 21/0332 (2013.01); H01L 21/31144 (2013.01); H01L 21/67069 (2013.01); H01L 22/26 (2013.01); H01J 37/3211 (2013.01); H01J 2237/24507 (2013.01); H01J 2237/3341 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract
Provided is a plasma processing method for selectively removing, after plasma etching using a mask having an amorphous carbon film containing boron, the amorphous carbon film using plasma from a silicon nitride film, a silicon oxide film or a tungsten film. The plasma processing method includes a removing step of removing the amorphous carbon film using plasma generated by mixed gas of Ogas and CHF gas, or CHFgas.