The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2022

Filed:

Apr. 17, 2020
Applicant:

Kla Corporation, Milpitas, CA (US);

Inventors:

Santosh Bhattacharyya, San Jose, CA (US);

Ge Cong, Pleasanton, CA (US);

Sanbong Park, Dublin, CA (US);

Boshi Huang, San Jose, CA (US);

Assignee:

KLA Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06T 7/33 (2017.01); G06T 7/00 (2017.01); G06K 9/62 (2022.01); G06N 3/08 (2006.01); G06N 20/00 (2019.01); H01J 37/22 (2006.01); H01J 37/28 (2006.01); G06F 17/18 (2006.01);
U.S. Cl.
CPC ...
G06T 7/337 (2017.01); G06F 17/18 (2013.01); G06K 9/6218 (2013.01); G06K 9/6268 (2013.01); G06N 3/08 (2013.01); G06N 20/00 (2019.01); G06T 7/0002 (2013.01); H01J 37/222 (2013.01); H01J 37/28 (2013.01); G06T 2207/10061 (2013.01); G06T 2207/20076 (2013.01); G06T 2207/20081 (2013.01); G06T 2207/20084 (2013.01); H01J 2237/221 (2013.01);
Abstract

A rendered image is aligned with a scanning electron microscope (SEM) image to produce an aligned rendered image. A reference image is aligned with the SEM image to produce an aligned reference image. A threshold probability map also is generated. Dynamic compensation of the SEM image and aligned reference image can produce a corrected SEM image and corrected reference image. A thresholded defect map can be generated and the defects of the thresholded probability map and the signal-to-noise-ratio defects of the thresholded defect map are filtered using a broadband-plasma-based property to produce defect-of-interest clusters.


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