The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2022

Filed:

Sep. 15, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Wenting Hou, San Jose, CA (US);

Jianxin Lei, Fremont, CA (US);

Jothilingam Ramalingam, Milpitas, CA (US);

Prashanth Kothnur, San Jose, CA (US);

William R. Johanson, Gilroy, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/18 (2006.01); C23C 14/34 (2006.01); H01J 37/32 (2006.01); C23C 14/35 (2006.01); C23C 14/14 (2006.01); C23C 14/16 (2006.01);
U.S. Cl.
CPC ...
C23C 14/18 (2013.01); C23C 14/14 (2013.01); C23C 14/16 (2013.01); C23C 14/3414 (2013.01); C23C 14/354 (2013.01); H01J 37/32027 (2013.01); H01J 37/32082 (2013.01);
Abstract

Method and apparatus that forms low resistivity tungsten film on substrates. In some embodiments, a method of reducing resistivity of tungsten includes generating a plasma in a processing volume of a physical vapor deposition (PVD) chamber with a process gas of krypton and using an RF power with a frequency of approximately 60 MHz and a magnetron, applying bias power at frequency of approximately 13.56 MHz to a substrate, and sputtering a tungsten target to deposit a tungsten thin film on the substrate. At least approximately 90% of the deposited tungsten thin film has a <110> crystalline orientation plane approximately parallel to a top surface of the substrate.


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