The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Dec. 28, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chun-Wei Chia, Kaohsiung, TW;
Chun-Hao Chou, Tainan, TW;
Kai-Chun Hsu, New Taipei, TW;
Kuo-Cheng Lee, Tainan, TW;
Shyh-Fann Ting, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes depositing a gate dielectric layer over a substrate. A gate electrode layer, a protection oxide layer, and a hard mask are sequentially deposited over the gate dielectric layer. The gate electrode layer and the protection oxide layer are patterned by using the hard mask as an etching mask to form a gate structure over the gate dielectric layer. An etching process is performed to remove the hard mask and thin the protection oxide layer after forming the gate structure.