The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2022

Filed:

Mar. 31, 2020
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Yanping Shen, Saratoga Springs, NY (US);

Haiting Wang, Clifton Park, NY (US);

Sipeng Gu, Clifton Park, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); H01L 27/222 (2013.01); H01L 43/12 (2013.01);
Abstract

One illustrative memory cell disclosed herein includes at least one layer of insulating material having a first opening and an internal sidewall spacer positioned within the first opening, wherein the internal sidewall spacer includes a spacer opening. The memory cell also includes a bottom electrode positioned within the spacer opening, a memory state material positioned above an upper surface of the bottom electrode and above an upper surface of the internal sidewall spacer, and a top electrode positioned above the memory state material.


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