The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2022
Filed:
Nov. 04, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chun-Wai Ng, Hsinchu, TW;
Hsueh-Liang Chou, Jhubei, TW;
Po-Chih Su, New Taipei, TW;
Ruey-Hsin Liu, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 21/265 (2006.01); H01L 21/306 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 21/26513 (2013.01); H01L 21/30604 (2013.01); H01L 21/76224 (2013.01); H01L 21/82385 (2013.01); H01L 21/823418 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 21/823487 (2013.01); H01L 21/823878 (2013.01); H01L 21/823885 (2013.01); H01L 21/823892 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/1095 (2013.01); H01L 29/4236 (2013.01); H01L 29/66621 (2013.01); H01L 29/66666 (2013.01); H01L 29/78 (2013.01); H01L 29/7827 (2013.01); H01L 29/42364 (2013.01); H01L 29/7813 (2013.01);
Abstract
A device includes a vertical transistor comprising a first gate in a first trench, wherein the first gate comprises a dielectric layer and a gate region over the dielectric layer, and a second gate in a second trench, a high voltage lateral transistor immediately adjacent to the vertical transistor and a low voltage lateral transistor, wherein the high voltage lateral transistor is between the vertical transistor and the low voltage lateral transistor.