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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11424244 B1

PDFFull Text
Date of Patent:
Aug. 23, 2022

Filed:

Nov. 04, 2020

Integrated circuit having a vertical power mos transistor

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chun-Wai Ng, Hsinchu, TW;

Hsueh-Liang Chou, Jhubei, TW;

Po-Chih Su, New Taipei, TW;

Ruey-Hsin Liu, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

David Vu

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 21/265 (2006.01); H01L 21/306 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 21/26513 (2013.01); H01L 21/30604 (2013.01); H01L 21/76224 (2013.01); H01L 21/82385 (2013.01); H01L 21/823418 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 21/823487 (2013.01); H01L 21/823878 (2013.01); H01L 21/823885 (2013.01); H01L 21/823892 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/1095 (2013.01); H01L 29/4236 (2013.01); H01L 29/66621 (2013.01); H01L 29/66666 (2013.01); H01L 29/78 (2013.01); H01L 29/7827 (2013.01); H01L 29/42364 (2013.01); H01L 29/7813 (2013.01);
Abstract

A device includes a vertical transistor comprising a first gate in a first trench, wherein the first gate comprises a dielectric layer and a gate region over the dielectric layer, and a second gate in a second trench, a high voltage lateral transistor immediately adjacent to the vertical transistor and a low voltage lateral transistor, wherein the high voltage lateral transistor is between the vertical transistor and the low voltage lateral transistor.

Find Patent Forward Citations

Ng, Chun-Wai. (2022). Integrated circuit having a vertical power mos transistor (U.S. Patent No. 11424244). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11424244

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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