The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2022
Filed:
May. 28, 2018
Hitachi High-tech Corporation, Tokyo, JP;
Yuki Kondo, Tokyo, JP;
Kenetsu Yokogawa, Tokyo, JP;
Masahito Mori, Tokyo, JP;
Satoshi Une, Tokyo, JP;
Kazunori Nakamoto, Tokyo, JP;
HITACHI HIGH-TECH CORPORATION, Tokyo, JP;
Abstract
Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatusincludes a first electrode (a base materialB) disposed in a sample stage, a ring-shaped second electrode (a conductive ring) disposed surrounding an outer peripheral side of an upper surface portion(a dielectric film portionA) of the sample stage, a dielectric ring-shaped member (a susceptor ring) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching devicedisposed on a power supply path to the second electrode. Further, a first position (A) and a grounding position between the second electrode and the matching deviceon the power supply path to the second electrode are electrically connected via a resistorhaving a predetermined value.