The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2022
Filed:
Jun. 23, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tsmc Nanjing Company Limited, Nanjing, CN;
Tsmc China Company Limited, Shanghai, CN;
Xin-Yong Wang, Shanghai, CN;
Liu Han, Nanjing, CN;
Li-Chun Tien, Tainan, TW;
Chih-Liang Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
TSMC NANJING COMPANY LIMITED, Nanjing, CN;
TSMC CHINA COMPANY LIMITED, Shanghai, CN;
Abstract
A device includes a transistor, an insulating structure, a buried conductive line, and a buried via. The transistor is above a substrate and includes a source/drain region and a source/drain contact above the source/drain region. The insulating structure is above the substrate and laterally surrounds the transistor. The buried conductive line is in the insulating structure and spaced apart from the transistor. The buried via is in the insulating structure and interconnects the transistor and the buried conductive line. A height of the buried conductive line is greater than a height of the source/drain contact.