The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2022
Filed:
Sep. 21, 2018
Applied Materials, Inc., Santa Clara, CA (US);
Ming Xia, San Jose, CA (US);
Dongqing Yang, Pleasanton, CA (US);
Ching-Mei Hsu, Mountain View, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Exemplary methods for removing nitride may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may further include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and flowing the plasma effluents into a processing region of the semiconductor processing chamber housing a substrate. The substrate may include a high-aspect-ratio feature. The substrate may further include a region of exposed nitride and a region of exposed oxide. The methods may further include providing a hydrogen-containing precursor to the processing region to produce an etchant. At least a portion of the exposed nitride may be removed with the etchant.