The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Oct. 12, 2021
Intel Corporation, Santa Clara, CA (US);
Michael Jackson, Portland, OR (US);
Anand Murthy, Portland, OR (US);
Glenn Glass, Beaverton, OR (US);
Saurabh Morarka, Hillsboro, OR (US);
Chandra Mohapatra, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.