The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
May. 14, 2021
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Jhu-Min Song, Nantou County, TW;
Chien-Chih Chou, New Taipei, TW;
Kong-Beng Thei, Hsinchu County, TW;
Fu-Jier Fan, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a well region extending in a first direction; a gate electrode disposed within the substrate and overlapping the well region; a gate dielectric layer disposed within the substrate and laterally surrounding the gate electrode; a plurality of first protection structures disposed over the gate electrode; a second protection structure extending in a second direction different from the first direction over the gate dielectric layer; and an insulating layer extending in the second direction between the second protection structure and the gate dielectric layer.