The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Nov. 03, 2020
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1233 (2013.01); G11C 13/0004 (2013.01); H01L 27/2481 (2013.01); H01L 45/08 (2013.01); H01L 45/122 (2013.01); H01L 45/1266 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01); H01L 45/1608 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 2013/005 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/52 (2013.01); G11C 2213/71 (2013.01); G11C 2213/73 (2013.01); G11C 2213/77 (2013.01);
Abstract
Methods, systems, and devices for a tapered cell profile and fabrication are described. A memory storage component may contain multiple chalcogenide materials and may include a tapered profile. For example, a first chalcogenide material may be coupled with a second chalcogenide material. Each of the chalcogenide materials may be further coupled with a conductive material (e.g., an electrode). Through an etching process, the chalcogenide materials may tapered (e.g., step tapered). A pulse may be applied to the tapered chalcogenide materials resulting in a memory storage component that includes a mixture of the chalcogenide materials.