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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11404283 B1

PDFFull Text
Date of Patent:
Aug. 02, 2022

Filed:

Sep. 04, 2020

Etching method

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Shigeru Tahara, Miyagi, JP;

Nobuaki Seki, Miyagi, JP;

Takahiko Kato, Miyagi, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorney:

Weihrouch IP

Primary Examiner:

Jiong-Ping Lu

Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/321 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01); H01L 21/311 (2006.01); H01L 21/3065 (2006.01); C23F 4/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32136 (2013.01); H01J 37/32642 (2013.01); H01J 37/32715 (2013.01); H01J 37/32724 (2013.01); H01J 37/32935 (2013.01); H01L 21/31116 (2013.01); H01L 21/32115 (2013.01); H01L 21/32138 (2013.01); H01L 21/67109 (2013.01); H01L 21/67248 (2013.01); H01L 21/6831 (2013.01); C23F 4/00 (2013.01); H01L 21/3065 (2013.01);
Abstract

A method for etching a ruthenium film includes a first step of etching the ruthenium film by plasma processing using oxygen-containing gas, and a second step of etching the ruthenium film by plasma processing using chlorine-containing gas. The first step and the second step are alternately performed. In the first step and the second step, the ruthenium film is etched at a target control temperature for a target processing time that are determined based on a pre-obtained relation between an etching amount per one cycle including the first step and the second step as a set, a control temperature of the ruthenium film, and processing times of each of the first step and the second step.

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