The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Sep. 28, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yi-Hsin Nien, Hsinchu, TW;
Wei-Chang Zhao, Hsinchu, TW;
Chih-Yu Lin, Taichung, TW;
Hidehiro Fujiwara, Hsinchu, TW;
Yen-Huei Chen, Hsinchu County, TW;
Ru-Yu Wang, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A memory device includes a first program line and a second program line. A first portion of the first program line is formed in a first conductive layer, and a second portion of the first program line is formed in a second conductive layer above the first conductive layer. A first portion of the second program line is formed in the first conductive layer. A second portion of the second program line is formed in the second conductive layer. A third portion of the second program line is formed in a third conductive layer above the second conductive layer. The first portion and the second portion of the first program line have sizes that are different from each other, and the first portion, the second portion and the third portion of the second program line have sizes that are different from each other.