The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2022

Filed:

Aug. 31, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chi-Ta Lu, Yilan County, TW;

Chih-Chiang Tu, Tauyen, TW;

Cheng-Ming Lin, Yunlin County, TW;

Ching-Yueh Chen, Hsinchu, TW;

Wei-Chung Hu, Hsinchu, TW;

Ting-Chang Hsu, Hsinchu, TW;

Yu-Tung Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/54 (2012.01); G03F 1/36 (2012.01); G03F 1/64 (2012.01); G03F 1/38 (2012.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 1/36 (2013.01); G03F 1/38 (2013.01); G03F 1/54 (2013.01); G03F 1/64 (2013.01); G03F 7/2004 (2013.01);
Abstract

A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.


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