The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

Nov. 02, 2020
Applicant:

Advanced Micro Devices, Inc., Santa Clara, CA (US);

Inventors:

Rahul Agarwal, Santa Clara, CA (US);

Milind S. Bhagavat, Broomfield, CO (US);

Ivor Barber, Santa Clara, CA (US);

Venkatachalam Valliappan, Singapore, SG;

Yuen Ting Cheng, Singapore, SG;

Guan Sin Chok, Singapore, SG;

Assignee:

ADVANCED MICRO DEVICES, INC, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 29/34 (2006.01); H01L 21/268 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3221 (2013.01); H01L 21/268 (2013.01); H01L 29/34 (2013.01);
Abstract

Various semiconductor chips with gettering regions and methods of making the same are disclosed. In one aspect, an apparatus is provided that includes a semiconductor chip that has a first side and a second side opposite the first side. The first side has a plurality of laser ablation craters. Each of the ablation craters has a bottom. A gettering region is in the semiconductor chip beneath the laser ablation craters. The gettering region includes plural structural defects. At least some of the structural defects emanate from at least some of the bottoms of the laser ablation craters.


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