The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

May. 14, 2019
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Zhiying Chen, Austin, TX (US);

Joel Blakeney, Austin, TX (US);

Megan Carruth, Austin, TX (US);

Peter Ventzek, Austin, TX (US);

Alok Ranjan, Austin, TX (US);

Kazuya Nagaseki, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 16/455 (2006.01); C23F 4/00 (2006.01); H05H 5/00 (2006.01); H01L 21/60 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3233 (2013.01); C23C 16/45536 (2013.01); C23F 4/00 (2013.01); H01J 37/32 (2013.01); H01J 37/3244 (2013.01); H05H 5/00 (2013.01); H01J 2237/06308 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3341 (2013.01); H01L 2021/60165 (2013.01);
Abstract

A method of plasma processing comprises generating electrons in a source chamber, generating an electric potential gradient between the source chamber and a processing chamber by applying a first negative direct current (DC) voltage to the source chamber and a ground voltage to the processing chamber, accelerating the electrons from the source chamber through a dielectric injector and into the processing chamber using the electric potential gradient, and generating an electron-beam sustained plasma (ESP) in the processing chamber using the electrons from the source chamber.


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