The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Dec. 17, 2019
Applicants:

Mattson Technology, Inc., Fremont, CA (US);

Beijing E-town Semiconductor Technology, Co., Ltd, Beijing, CN;

Inventors:

Chun Yan, San Jose, CA (US);

Tsai Wen Sung, Fremont, CA (US);

Sio On Lo, Milpitas, CA (US);

Hua Chung, Saratoga, CA (US);

Michael X. Yang, Palo Alto, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 29/66 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32137 (2013.01); H01J 37/321 (2013.01); H01J 37/3244 (2013.01); H01J 37/32091 (2013.01); H01J 37/32422 (2013.01); H01L 21/02071 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/28088 (2013.01); H01L 21/67069 (2013.01); H01L 29/66545 (2013.01); H01J 2237/334 (2013.01);
Abstract

Apparatus, systems, and methods for conducting a silicon containing material removal process on a workpiece are provided. In one example implementation, the method can include generating species from a process gas in a first chamber using an inductive coupling element. The method can include introducing a fluorine containing gas with the species to create a mixture. The mixture can include exposing a silicon structure of the workpiece to the mixture to remove at least a portion of the silicon structure.


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