The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Apr. 10, 2019
Applicants:

Mattson Technology, Inc., Fremont, CA (US);

Beijing E-town Semiconductor Technology, Co., Ltd, Beijing, CN;

Inventors:

Michael X. Yang, Palo Alto, CA (US);

Hua Chung, Saratoga, CA (US);

Xinliang Lu, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01J 37/32 (2006.01); C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31122 (2013.01); C23C 14/3471 (2013.01); H01J 37/32357 (2013.01); H01J 37/32422 (2013.01); H01L 21/0234 (2013.01); H01L 21/3065 (2013.01); H01L 21/32136 (2013.01); H01L 21/67069 (2013.01); H01J 37/321 (2013.01); H01J 37/3244 (2013.01);
Abstract

Methods for material removal of a film, such as a metal nitride film, from a workpiece are provided. One example implementation is directed to a method for processing a workpiece. The workpiece can include a film (e.g., a metal nitride film). The method can include generating one or more species (e.g., hydrogen radicals, excited inert gas molecules, etc.). The method can include mixing alkyl halide with the one or more species to generate one or more alkyl radicals. The method can include exposing the film to the one or more alkyl radicals.


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