The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Jun. 29, 2018
Intel Corporation, Santa Clara, CA (US);
Justin Brockman, Portland, OR (US);
Conor Puls, Portland, OR (US);
Stephen Wu, Portland, OR (US);
Christopher Wiegand, Portland, OR (US);
Tofizur Rahman, Portland, OR (US);
Daniel Ouellette, Portland, OR (US);
Angeline Smith, Hillsboro, OR (US);
Andrew Smith, Hillsboro, OR (US);
Pedro Quintero, Beaverton, OR (US);
Juan Alzate-Vinasco, Tigard, OR (US);
Oleg Golonzka, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A memory device method of fabrication that includes a first electrode having a first conductive layer including titanium and nitrogen and a second conductive layer on the first conductive layer that includes tantalum and nitrogen. The memory device further includes a magnetic tunnel junction (MTJ) on the first electrode. In some embodiments, at least a portion of the first conductive layer proximal to an interface with the second conductive layer includes oxygen.