The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

Feb. 13, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chia-Yu Wei, Tainan, TW;

Fu-Cheng Chang, Tainan, TW;

Hsin-Chi Chen, Tainan, TW;

Ching-Hung Kao, Tainan, TW;

Chia-Pin Cheng, Kaohsiung, TW;

Kuo-Cheng Lee, Tainan, TW;

Hsun-Ying Huang, Tainan, TW;

Yen-Liang Lin, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/146 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14614 (2013.01); H01L 27/14643 (2013.01); H01L 29/0653 (2013.01); H01L 29/4236 (2013.01); H01L 29/42376 (2013.01); H01L 29/78 (2013.01); H01L 29/7853 (2013.01);
Abstract

A gate structure includes a gate and a first isolation structure having a top surface and a bottom surface. The gate includes a first sidewall adjacent to the first isolation structure, a second sidewall, a first horizontal surface adjacent to a bottom edge of the first sidewall and a bottom edge of the second sidewall, the first horizontal surface being between the top surface of the first isolation structure and the bottom surface of the first isolation structure. The gate also includes a second horizontal surface adjacent to a top edge of the second sidewall. An effective channel width defined by the gate structure includes a height of the second sidewall and a width of the second horizontal surface.


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