The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

Aug. 19, 2020
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Masahiro Tabata, Miyagi, JP;

Yoshihide Kihara, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30655 (2013.01); H01L 21/0273 (2013.01); H01L 21/02211 (2013.01); H01L 21/3083 (2013.01); H01J 37/32165 (2013.01); H01J 2237/3342 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01);
Abstract

A method of processing a target object is provided. The target object includes a first protrusion portion, a second protrusion portion, and a groove portion provided on a main surface of the target object and defined by the first protrusion portion and the second protrusion portion and an inner surface of the groove portion is included in the main surface of the target object. The method comprises forming a protection film conformally on the main surface of the target object after the forming of the protection film conformally, repeatedly performing a plasma etching on a bottom portion of the groove portion of the target object and performing the forming of the protection film and the performing of the plasma etching N times (N is an integer equal to or larger than 2). The protection film is formed depending on a shape of the groove portion which has been changed by the plasma etching.


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