The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Feb. 12, 2020
Applicant:
Entegris, Inc., Billerica, MA (US);
Inventors:
Han Wang, Cromwell, CT (US);
Bryan C. Hendrix, Danbury, CT (US);
Eric Condo, Shelton, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Assignee:
ENTEGRIS, INC., Billerica, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/04 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0217 (2013.01); C23C 16/04 (2013.01); C23C 16/345 (2013.01); C23C 16/45525 (2013.01); H01L 21/0228 (2013.01); H01L 21/02205 (2013.01); H01L 21/02208 (2013.01);
Abstract
Certain embodiments of the invention utilize low temperature atomic layer deposition methodology to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses silicon tetraiodide (SiI) or disilicon hexaiodide (SiI) as one precursor and uses a nitrogen-containing material such as ammonia as another precursor. In circumstances where a selective deposition of silicon nitride is desired to be deposited over silicon dioxide, the substrate surface is first treated with ammonia plasma.