The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Jun. 12, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yu-San Chien, Hsinchu, TW;
Chun-Sheng Liang, Changhua County, TW;
Jhon-Jhy Liaw, Hsinchu County, TW;
Kuo-Hua Pan, Hsinchu, TW;
Hsin-Che Chiang, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Provided are a semiconductor device and a method of forming the same. The semiconductor device includes a substrate, a plurality of hybrid fins, a gate, and a dielectric structure. The substrate includes a plurality of fins. The plurality of hybrid fins are respectively disposed between the plurality of fins. The gate covers portions of the plurality of fins and the plurality of hybrid fins. The dielectric structure lands on one of the plurality of hybrid fins to divide the gate into two segment. The two segments are electrically isolated to each other by the dielectric structure and the one of the plurality of hybrid fins.