The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Oct. 07, 2019
Tokyo Electron Limited, Tokyo, JP;
Wan Jae Park, Albany, NY (US);
Akiteru Ko, Albany, NY (US);
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A patterned photo resist layer (for example an EUV photo resist layer), which may exhibit line width roughness (LWR) and line edge roughness (LER) or scum is treated with a plasma treatment before subsequent etching processes. The plasma treatment reduces LWR, LER, and/or photo resist scum. In one exemplary embodiment, the plasma treatment may include a plasma formed using a gas having a boron and halogen compound. In one embodiment, the gas compound may be a boron and chlorine compound, for example boron trichloride (BCl) gas. In another embodiment, the gas compound may be a boron and fluorine compound, for example BFgases. The plasma treatment process may modify the photoresist surface to improve LWR, LER, and scum effects by removing roughness from the photo resist surface and removing photo resist residues which may case scumming.