The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
Sep. 18, 2019
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Yu-Ming Hsu, Changhua County, TW;
Yu-Chi Wang, Taipei, TW;
Yen-Hsing Chen, Taipei, TW;
Tsung-Mu Yang, Tainan, TW;
Yu-Ren Wang, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/205 (2006.01); H01L 29/267 (2006.01); H01L 29/15 (2006.01); H01L 29/20 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/155 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/267 (2013.01); H01L 29/04 (2013.01);
Abstract
An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.