IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11355348 B1

PDFFull Text
Date of Patent:
Jun. 07, 2022

Filed:

Apr. 14, 2020

Integrated circuit, construction of integrated circuitry, and method of forming an array

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Gurpreet Lugani, Boise, ID (US);

Kyle B. Campbell, Boise, ID (US);

Mario J. Di Cino, Boise, ID (US);

Aaron W. Freese, Boise, ID (US);

Alex Kogan, Boise, ID (US);

Kevin R. Shea, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Wells St. John P.S.

Primary Examiner:

Matthew L Reames

Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/308 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); G11C 11/22 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3081 (2013.01); G11C 11/221 (2013.01); H01L 21/0274 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01);
Abstract

A method of forming an array comprising using two different composition masking materials in forming a pattern of spaced repeating first features of substantially same size and substantially same shape relative one another. A pattern-interrupting second feature of at least one of different size or different shape compared to that of the first features is within and interrupts the pattern of first features. The pattern of the first features with the pattern-interrupting second feature are translated into lower substrate material that is below the first features and the pattern-interrupting second feature. Material of the first features and of the pattern-interrupting second feature that is above the lower substrate material is removed at least one of during or after the translating. After the removing, the pattern-interrupting second feature in the lower substrate material is used as a reference location to reckon which of the two different composition masking materials was used to make first spaces between the first features in an analysis area in the material that was above the lower substrate material or which of the two different composition masking materials was used to make second spaces between the first features in the analysis area that alternate with the first spaces. Structure independent of method is disclosed.

Find Patent Forward Citations

Loading…