The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2022
Filed:
Feb. 08, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76813 (2013.01); H01L 21/31116 (2013.01); H01L 21/76816 (2013.01); H01L 21/76834 (2013.01); H01L 23/5226 (2013.01); H01L 23/53295 (2013.01); H01L 21/76843 (2013.01); H01L 23/5222 (2013.01); H01L 23/5283 (2013.01);
Abstract
An interconnect structure includes a damascene structure, an inter-metal dielectric (IMD), a dielectric block and a metal via. The inter-metal dielectric layer is over the damascene structure. The dielectric block is embedded in the IMD layer and has a different etch selectivity than the IMD layer. The metal via is in the IMD layer and through the dielectric block to electrically connect the damascene structure.