The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2022
Filed:
Jun. 06, 2019
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Hideo Nakamura, Yamanashi, JP;
Yosuke Serizawa, Yamanashi, JP;
Yoshikazu Ideno, Yamanashi, JP;
Hiroaki Ashizawa, Yamanashi, JP;
Takaya Shimizu, Yamanashi, JP;
Seishi Murakami, Yamanashi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01); H01L 21/28 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28202 (2013.01); C23C 16/34 (2013.01); C23C 16/45525 (2013.01);
Abstract
A film forming method includes: repeatedly performing a source gas adsorption process including supplying a source gas containing a metal element to form a nitride film on a substrate in a chamber and purging a residual gas, and a nitriding process including supplying a nitriding gas onto the substrate and purging a residual gas; and supplying a hydrazine-based compound gas as a part or all of the nitriding gas.