The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2022

Filed:

May. 13, 2020
Applicants:

Mattson Technology, Inc., Fremont, CA (US);

Beijing E-town Semiconductor Technology Co., Ltd., Beijing, CN;

Inventors:

Martin L. Zucker, Orinda, CA (US);

Peter J. Lembesis, Boulder Creek, CA (US);

Ryan M. Pakulski, Brentwood, CA (US);

Shawming Ma, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/68 (2006.01); H01L 21/203 (2006.01); H01L 21/677 (2006.01); B25J 11/00 (2006.01); B25J 15/00 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32642 (2013.01); B25J 11/0095 (2013.01); B25J 15/0014 (2013.01); H01J 37/321 (2013.01); H01J 37/32568 (2013.01); H01J 37/32715 (2013.01); H01J 37/32733 (2013.01); H01J 37/32743 (2013.01); H01J 37/32807 (2013.01); H01J 37/32899 (2013.01); H01L 21/203 (2013.01); H01L 21/67069 (2013.01); H01L 21/67167 (2013.01); H01L 21/67196 (2013.01); H01L 21/67201 (2013.01); H01L 21/67745 (2013.01); H01L 21/67766 (2013.01); H01L 21/681 (2013.01); H01L 21/6831 (2013.01); H01L 21/68707 (2013.01); H01L 21/68742 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/334 (2013.01); H01L 21/67742 (2013.01);
Abstract

A plasma processing apparatus is provided. The plasma processing apparatus includes a processing chamber defining a vertical direction and a lateral direction. The plasma processing apparatus includes a pedestal disposed within the processing chamber. The pedestal is configured to support the substrate. The plasma processing apparatus includes a radio frequency (RF) disposed within the processing chamber. The RF bias electrode defines a RF zone extending between a first end of the RF bias electrode and a second end of the RF bias electrode along the lateral direction. The plasma processing apparatus includes a focus ring disposed within the processing chamber. The plasma processing apparatus further includes a focus ring adjustment assembly. The focus ring adjustment assembly includes a lift pin positioned outside of the RF zone. The lift pin is movable along the vertical direction to adjust a distance between the pedestal and the focus ring along the vertical direction.


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