The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Sep. 01, 2020
Applicant:

Stats Chippac Pte. Ltd., Singapore, SG;

Inventors:

SungWon Cho, Seoul, KR;

ChangOh Kim, Incheon, KR;

Il Kwon Shim, Singapore, SG;

InSang Yoon, Seoul, KR;

KyoungHee Park, Seoul, KR;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/34 (2006.01); H01L 23/28 (2006.01); H01L 21/00 (2006.01); H05K 7/20 (2006.01); H01L 23/552 (2006.01); H01L 23/00 (2006.01); H01L 23/36 (2006.01); H01L 23/522 (2006.01); H01L 23/50 (2006.01); H01L 23/60 (2006.01); H01L 23/498 (2006.01); H01L 27/02 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 23/3107 (2013.01); H01L 23/36 (2013.01); H01L 23/367 (2013.01); H01L 23/49816 (2013.01); H01L 23/50 (2013.01); H01L 23/5225 (2013.01); H01L 23/562 (2013.01); H01L 23/60 (2013.01); H01L 24/26 (2013.01); H01L 27/0248 (2013.01); H01L 2924/181 (2013.01);
Abstract

A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.


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