The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Jul. 10, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Ting-Ya Cheng, Taipei, TW;
Han-Lung Chang, Kaohsiung, TW;
Shi-Han Shann, Hsinchu, TW;
Li-Jui Chen, Hsinchu, TW;
Yen-Shuo Su, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); H05G 2/00 (2006.01); G02B 7/182 (2021.01);
U.S. Cl.
CPC ...
G03F 7/70033 (2013.01); G02B 7/182 (2013.01); G03F 7/7055 (2013.01); H05G 2/006 (2013.01); H05G 2/008 (2013.01);
Abstract
A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.