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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11340286 B1

PDFFull Text
Date of Patent:
May. 24, 2022

Filed:

Dec. 29, 2018

On-wafer s-parameter calibration method

Applicant:

The 13th Research Institute of China Electronics Technology Group Corporation, Hebei, CN;

Inventors:

Aihua Wu, Shijiazhuang, CN;

Chong Li, Shijiazhuang, CN;

Chen Liu, Shijiazhuang, CN;

Yibang Wang, Shijiazhuang, CN;

Xingchang Fu, Shijiazhuang, CN;

Faguo Liang, Shijiazhuang, CN;

Xiuwei Tian, Shijiazhuang, CN;

Yanan Liu, Shijiazhuang, CN;

Jian Cao, Shijiazhuang, CN;

Assignee:

THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS, Hebei, CN;

Attorney:

Cooper Legal Group, LLC

Primary Examiner:

Akm Zakaria

Int. Cl.
CPC ...
G01R 31/28 (2006.01); G01R 35/00 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2853 (2013.01); G01R 31/2886 (2013.01); G01R 35/005 (2013.01);
Abstract

The present application is applicable to the technical field of terahertz on-wafer measurement, and provides a new on-wafer S-parameter calibration method and device. The method includes: performing two-port calibration on a waveguide end face when a probe is not connected to a test system; performing one-port calibration on each of two probe end faces when the probe is connected to the test system; and fabricating a crosstalk calibration standard equal to a device under test in length on a substrate of the device under test, and correct a crosstalk error of the test system according to the crosstalk calibration standard. The present application can realize accurate characterization and correction of crosstalk error in a high-frequency on-wafer S-parameter calibration process, and improve the accuracy of error correction in high-frequency on-wafer S-parameter measurement.

Find Patent Forward Citations

Wu, Aihua. (2022). On-wafer s-parameter calibration method (U.S. Patent No. 11340286). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11340286

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