The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2022

Filed:

Nov. 24, 2020
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Weitian Kou, Eindhoven, NL;

Alexander Ypma, Veldhoven, NL;

Marc Hauptmann, Turnhout, BE;

Michiel Kupers, Roermond, NL;

Lydia Marianna Vergaij-Huizer, Eindhoven, NL;

Erik Johannes Maria Wallerbos, Helmond, NL;

Erik Henri Adriaan Delvigne, Breda, NL;

Willem Seine Christian Roelofs, Deurne, NL;

Hakki Ergün Cekli, Singapore, SG;

Stefan Cornelis Theodorus Van Der Sanden, Nijmegen, NL;

Cédric Désiré Grouwstra, Eindhoven, NL;

David Frans Simon Deckers, Turnhout, BE;

Manuel Giollo, Eindhoven, NL;

Iryna Dovbush, Eindhoven, NL;

Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70508 (2013.01); G03F 7/705 (2013.01); G03F 7/70633 (2013.01);
Abstract

A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.


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