The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2022

Filed:

Jan. 16, 2019
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Olaf Hohlfeld, Warstein, DE;

Juergen Hoegerl, Regensburg, DE;

Gottfried Beer, Nittendorf, DE;

Magdalena Hoier, Seubersdorf, DE;

Georg Meyer-Berg, Munich, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/373 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5389 (2013.01); H01L 21/486 (2013.01); H01L 23/5384 (2013.01); H01L 24/00 (2013.01); H01L 25/00 (2013.01); H01L 21/561 (2013.01); H01L 23/3135 (2013.01); H01L 23/3735 (2013.01); H01L 23/49811 (2013.01); H01L 23/5386 (2013.01); H01L 24/25 (2013.01);
Abstract

A power semiconductor module includes a power semiconductor die attached to the first metallized side, a passive component attached to the first metallized side, a first isolation layer encapsulating the power semiconductor die and the passive component, a first structured metallization layer on the first isolation layer, and a first plurality of electrically conductive vias extending through the first isolation layer from the first structured metallization layer to the power semiconductor die and the passive component.


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