The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Dec. 02, 2016
Applicant:
Asml Netherlands B.v., Veldhoven, NL;
Inventors:
Pieter-Jan Van Zwol, Eindhoven, NL;
Dennis De Graaf, Waalre, NL;
Paul Janssen, Eindhoven, NL;
Mária Péter, Eindhoven, NL;
Marcus Adrianus Van De Kerkhof, Helmond, NL;
Willem Joan Van Der Zande, Bussum, NL;
David Ferdinand Vles, Eindhoven, NL;
Willem-Pieter Voorthuijzen, 's-Hertogenbosch, NL;
Assignee:
ASML NETHERLANDS B.V., Veldhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/62 (2012.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 1/62 (2013.01); G03F 7/2008 (2013.01); G03F 7/70916 (2013.01); G03F 7/70983 (2013.01);
Abstract
A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and including a stack having: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine.