The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2022
Filed:
Sep. 17, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Hsin-Che Chiang, Taipei, TW;
Wei-Chih Kao, Taipei, TW;
Chun-Sheng Liang, Changhua County, TW;
Kuo-Hua Pan, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes providing a semiconductor substrate; epitaxially growing a blocking layer from a top surface of the semiconductor substrate, wherein the blocking layer has a lattice constant different from the semiconductor substrate; epitaxially growing a semiconductor layer above the blocking layer; patterning the semiconductor layer to form a semiconductor fin, wherein the blocking layer is under the semiconductor fin; forming a source/drain (S/D) feature in contact with the semiconductor fin; and forming a gate structure engaging the semiconductor fin.