The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2022
Filed:
Sep. 11, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Seiji Takahashi, Hsinchu, TW;
Chen-Jong Wang, Hsin-Chu, TW;
Dun-Nian Yaung, Taipei, TW;
Jhy-Jyi Sze, Hsin-Chu, TW;
Yimin Huang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure relates to a CMOS image sensor having a doped isolation structure separating a photodiode and a pixel device, and an associated method of formation. In some embodiments, the CMOS image sensor has a doped isolation structure separating a photodiode and a pixel device. The photodiode is arranged within the substrate away from a front-side of the substrate. A pixel device is disposed at the front-side of the substrate overlying the photodiode and is separated from the photodiode by the doped isolation structure. Comparing to previous image sensor designs, where an upper portion of the photodiode is commonly arranged at a top surface of a front-side of the substrate, now the photodiode is arranged away from the top surface and leaves more room for pixel devices. Thus, a larger pixel device can be arranged in the sensing pixel, and short channel effect and noise level can be improved.