The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2022
Filed:
Aug. 29, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yung-Chih Wang, Taoyuan, TW;
Yu-Chieh Liao, Taoyuan, TW;
Tai-I Yang, Hsinchu, TW;
Hsin-Ping Chen, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A device includes a nanowire, a gate dielectric layer, a gate electrode, a gate pickup metal layer, and a gate contact. The nanowire extends in a direction perpendicular to a top surface of a substrate. The gate dielectric layer laterally surrounds the nanowire. The gate electrode laterally surrounds the gate dielectric layer. The gate pickup metal layer is in contact with a bottom surface of the gate electrode and extends laterally past opposite sidewalls of the gate electrode. The gate contact is in contact with the gate pickup metal layer.