The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2022
Filed:
Sep. 11, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jian-Hong Lin, Yunlin County, TW;
Kuo-Yen Liu, Hsinchu County, TW;
Hsin-Chun Chang, Taipei, TW;
Tzu-Li Lee, Yunlin County, TW;
Yu-Ching Lee, Kaohsiung, TW;
Yih-Ching Wang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes depositing a first dielectric layer over a substrate; forming a first dummy metal layer over the first dielectric layer, wherein the first dummy metal layer has first and second portions laterally separated from each other; depositing a second dielectric layer over the first dummy metal layer; etching an opening having an upper portion in the second dielectric layer, a middle portion between the first and second portions of the first dummy metal layer, and a lower portion in the first dielectric layer, wherein a width of the lower portion of the opening is greater than a width of the middle portion of the opening, and a bottom of the opening is higher than a bottom of the first dielectric layer; and forming a dummy via in the opening and a second dummy metal layer over the dummy via and the second dielectric layer.