The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Apr. 09, 2018
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Feras Eid, Chandler, AZ (US);

Shawna M. Liff, Scottsdale, AZ (US);

Thomas Sounart, Chandler, AZ (US);

Johanna M. Swan, Scottsdale, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/00 (2006.01); H01L 23/498 (2006.01); H01G 4/008 (2006.01); H05K 1/16 (2006.01); H01G 4/30 (2006.01); H01L 21/48 (2006.01); H05K 1/18 (2006.01); H01L 41/047 (2006.01); H01G 4/12 (2006.01); H01L 41/187 (2006.01); H01L 41/053 (2006.01); H01L 41/29 (2013.01); H01L 41/314 (2013.01); H01L 29/16 (2006.01); H01L 23/14 (2006.01); H01L 23/00 (2006.01); H05K 1/11 (2006.01); H01L 23/367 (2006.01); H01L 41/09 (2006.01); H01L 41/113 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01G 4/008 (2013.01); H01G 4/1227 (2013.01); H01G 4/1245 (2013.01); H01G 4/1254 (2013.01); H01G 4/30 (2013.01); H01L 21/4857 (2013.01); H01L 23/145 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 29/16 (2013.01); H01L 41/047 (2013.01); H01L 41/0533 (2013.01); H01L 41/1871 (2013.01); H01L 41/1873 (2013.01); H01L 41/1876 (2013.01); H01L 41/29 (2013.01); H01L 41/314 (2013.01); H05K 1/162 (2013.01); H05K 1/181 (2013.01); H01L 23/367 (2013.01); H01L 24/16 (2013.01); H01L 41/09 (2013.01); H01L 41/1132 (2013.01); H01L 2224/16227 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19102 (2013.01); H05K 1/111 (2013.01); H05K 2201/10151 (2013.01); H05K 2201/10378 (2013.01); H05K 2201/10734 (2013.01);
Abstract

Disclosed herein are microelectronic assemblies with integrated perovskite layers, and related devices and methods. For example, in some embodiments, a microelectronic assembly may include an organic package substrate portion having a surface with a conductive layer, and a perovskite conductive layer on the conductive layer. In some embodiments, a microelectronic assembly may include an organic package substrate portion having a surface with a conductive layer, a perovskite conductive layer having a first crystalline structure on the conductive layer, and a perovskite dielectric layer having a second crystalline structure on the perovskite conductive layer. In some embodiments, the first and second crystalline structures have a same orientation.


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