The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Jul. 09, 2020
International Business Machines Corporation, Armonk, NY (US);
Chen Zhang, Albany, NY (US);
Dechao Guo, Niskayuna, NY (US);
Junli Wang, Slingerlands, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Juntao Li, Cohoes, NY (US);
Chanro Park, Clifton Park, NY (US);
Ruqiang Bao, Niskayuna, NY (US);
Sung Dae Suk, Watervliet, NY (US);
Lan Yu, Voorheesville, NY (US);
Heng Wu, Guilderland, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An embodiment of the invention may include a semiconductor structure and method of manufacturing. The semiconductor structure may include a top channel and a bottom channel, wherein the top channel includes a plurality of vertically oriented channels. The bottom channel includes a plurality of horizontally oriented channels. The semiconductor structure may include a gate surrounding the top channel and the bottom channel. The semiconductor structure may include spacers located on each side of the gate. A first spacer includes a dielectric material located between the plurality of vertically oriented channels. A second spacer includes a dielectric material located between the plurality of horizontally oriented channels. This may enable spacer formation between the vertical spacers.