The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Jan. 24, 2020
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Yanping Shen, Saratoga Springs, NY (US);
Haiting Wang, Clifton Park, NY (US);
Hong Yu, Rexford, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. INC., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 29/16 (2013.01); H01L 29/4236 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a scheme of active and dummy fin structures and methods of manufacture. The structure includes: an active fin structure; at least one dummy fin structure running along at least one side of the active fin structure along its length; a fin cut separating the at least one dummy fin structure along its longitudinal axes; and a gate structure extending over the active fin structure and the fin cut.