The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Nov. 04, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Lilly Su, Chubei, TW;
Chii-Horng Li, Zhubei, TW;
Ming-Hua Yu, Hsinchu, TW;
Pang-Yen Tsai, Zhubei, TW;
Tze-Liang Lee, Hsinchu, TW;
Yen-Ru Lee, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor device includes forming a first gate stack over a substrate. The method further includes etching the substrate to define a cavity. The method further includes growing a first epitaxial (epi) material in the cavity, wherein the first epi material includes a first upper surface having a first crystal plane. The method further includes growing a second epi material on the first epi material, wherein the second epi material includes a second upper surface having the first crystal plane. The method further includes treating the second epi material, wherein treating the second epi material comprises causing the second upper surface to transform to a second crystal plane different from the first crystal plane.