The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Dec. 12, 2019
United Microelectronics Corp., Hsin-Chu, TW;
Yen-Hsing Chen, Taipei, TW;
Yu-Ming Hsu, Changhua County, TW;
Yu-Chi Wang, Taipei, TW;
Tsung-Mu Yang, Tainan, TW;
Yu-Ren Wang, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A high electron mobility transistor (HEMT) includes a buffer layer on a substrate, in which the buffer layer includes a first buffer layer and a second buffer layer. Preferably, the first buffer layer includes a first layer of the first buffer layer comprising AlGaN on the substrate and a second layer of the first buffer layer comprising AlGaN on the first layer of the first buffer layer. The second buffer layer includes a first layer of the second buffer layer comprising AlGaN on the first buffer layer and a second layer of the second buffer layer comprising AlGaN on the first layer of the second buffer layer, in which x>z>y>w.