Layout structure including anti-fuse cell

Abstract

A structure includes a first data line and a first anti-fuse cell including first/second programming devices and first/second reading devices. The first programming device includes a first gate and first/second source/drain regions disposing on opposite sides of first gate. The second programming device includes a second gate separate from the first gate and coupled to a first word line and third/fourth source/drain regions disposing on opposite sides of second gate. The first reading device includes a third gate and fifth/sixth source/drain regions disposing on opposite sides of third gate. The second reading device includes a fourth gate and seventh/eighth source/drain regions disposing on opposite sides of fourth gate. The third/fourth gates are parts of the first continuous gate coupled to a second word line. The fifth/seventh source/drain regions are coupled to the second/fourth source/drain regions, respectively. The sixth/eighth source/drain regions are coupled to the first data line.